DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Rohm BSM180D12P3C007 Trench SiC MOSFET: Structure and Cost Analysis" report to their offering. The BSM180D12P3C007 is a ...
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...
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Toyota’s new Chinese BEV integrates ROHM SiC MOSFET
ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been adopted for mass production in Toyota's new battery electric vehicle (BEV), ...
ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in ...
Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...
ROHM is advancing 4th-gen SiC MOSFETs while prepping for future tech. Credit: RidhamSupriyanto/Shutterstock. ROHM’s 4th generation silicon carbide (SiC) metal-oxide ...
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