A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
Transphorm, the GaN power semiconductor specialist, has a simulation model and preliminary datasheet for its 1200V GaN-on-Sapphire FET – TP120H070WS FET which samples in Q1 2024. Transphorm, the GaN ...
"With great power comes great responsibility," says Spider-Man's wise Uncle Ben. Who knew he was really talking about electronic design, FETs, source nets, and switching frequencies? Power MOSFETs are ...
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