As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO 2 ...
Hafnium-based FE materials have attracted particular interest owing to their low power consumption, strong compatibility with complementary metal-oxide-semiconductor (CMOS) processes and proven ...
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