Suited for induction-heating applications, the FGL60N100BNTD NPT trench IGBT offers an avalanche immunity in the 900 to 1,000-V IGBT market. Features include a saturation voltage of 2.5 V at 60 A, a ...
Fairchild Semiconductor's FGA25N120ANTD 1200-V non-punch through (NPT)-Trench IGBT combines avalanche immunity with optimized trade-off performance between switching and conduction losses to increase ...
Fairchild Semiconductor’s FGA15N120ANTD is a 1200-V, 15-A NPT-Trench IGBT with the ability to withstand as much as 300 mJ of avalanche energy in induction heating applications. The avalance capability ...
Power semiconductor devices such as SiC MOSFETs, IGBT, and GaN are experiencing increasingly fierce competition in EV, charging pile, energy storage, and renewable energy applications, but their ...
In recent years, power semiconductor applications have expanded from industrial and consumer electronics to renewable energy and electric vehicles. Looking to the future, the most promising power ...
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