HEFEI, China, Oct. 01, 2022 (GLOBE NEWSWIRE) -- Lakesemi announced that it has developed a new generation silicon carbide full bridge with rectifier module — LSCT30PV120B9G. This new module has a very ...

Mitsubishi Electric has introduced a high voltage integrated circuit to drive igbt power modules dedicated to 400V ac lines. The M81738FP is suitable for 1200V class igbt devices and is said to have ...

After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...

(http://www.researchandmarkets.com/research/rbrk35/infineon) has announced the addition of the "Infineon EconoPACK4 1200V IGBT4 Module - Reverse Costing Analysis ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...

Mitsubishi Electric is introducing its 6th generation Mega Power Dual (MPD) Insulated Gate Bipolar Transistor (IGBT) modules. The modules, which are for use in power converters such as large-capacity ...

Microsemi Corporation announced a line of intelligent half bridge Insulated Gate Bipolar Transistor (IGBT) standard power modules, including five products that simplify system design and are each ...

Wolfspeed, Inc., a global leader in silicon carbide technology, today announced its new 1200V SiC six-pack power modules that redefine performance benchmarks for high-power inverters. By combining its ...

ROHM has developed a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment. The 300A rated current is said to make the ...

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial ...