Toshiba has announced the latest generation of 3D flash memory, the 4-bit-per-cell, quadruple-level cell (QLC) technology NAND flash memory. Thanks to the QLC technology, which features a 64-layer ...
Demand for NAND flash is positive within the electronics supply chain, according to a study from DRAMeXchange, which today projected that demand bit growth is expected to surpass 130% year over year ...
Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology TOKYO— Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in ...
SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today introduced a high-performance mobile memory storage based on Embedded ...
A slowdown in SSD demand for consumer PCs will constrain NAND flash bit demand growth through 2025, with the year-on-year growth expected to stay below 30%, according to TrendForce. Some subscribers ...
SK hynix has unveiled its next-generation high-performance storage device solutions, aiming to strengthen its position in the ...
The world's NAND flash makers have been embroiled in a battle to reach 1,000 layers of flash first. This race will theoretically give the winner the opportunity to be first to market with an ...
Doubling the storage capacity of a NAND flash memory using multilevel charge (MLC) storage lacks the high data integrity that data and program storage applications need. The X2 storage scheme, ...
WDC gave keynote talks by Alper Ilkbahar and Siva Sivaram at the 2023 FMS. In the first talk they discussed their CMOS Bonded Array technology where they create separate wafers for the NAND flash ...
Samsung has announced a new type of V-NAND, with three bits per cell and 48 layers per chip. The company wants to make terabyte-class SSDs much more popular than they currently are, in both data ...
Why NAND flash is often misunderstood. Details about some of the most commonly held NAND flash myths. Insights into important design considerations for NAND flash, including temperature range, density ...
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