Researchers have developed a stacking technology for a magneto-resistive random access memory (MRAM) to separately form a single-crystal tunnel magnetoresistive (TMR) thin film and then bond it to a ...
(Nanowerk News) The magnetic, conductive and optical properties of complex oxides make them key to components of next-generation electronics used for data storage, sensing, energy technologies, ...
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Intel Foundry Roadmap Update - New 18A-PT variant that enables 3D die stacking, 14A process node enablement
Intel's new CEO Lip Bu-Tan took to the stage at the company's Intel Foundry Direct 2025 event here in San Jose, California, to outline the company's progress on its foundry initiative. Tan announced ...
Stacking ultrathin complex oxide single-crystal layers allows researchers to create new structures with hybrid properties and multiple functions. Now, using a new platform, researchers will be able to ...
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