V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
In 2025, Mitsubishi Electric plans to begin mass production of power modules equipped with SiC MOSFETs. Save my User ID and Password Some subscribers prefer to save their log-in information so they do ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ. Santa Clara, CA and Kyoto, Japan, Dec. 04, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced they have begun ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ...
The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback