Silicon carbide (SiC) has emerged as a transformative material for high-efficiency power electronics, owing to its wide band gap, high thermal conductivity and superior breakdown strength. Optimising ...
Silicon carbide (SiC) has emerged as a transformative material for power electronics owing to its wide bandgap, high breakdown voltage and exceptional thermal conductivity. Compared with conventional ...
SiC and GaN device makers are using advanced junction structures and innovative packaging to offer more robust, cooler-running products. Advanced packaging technologies are also fueling the rise of ...
Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resistance, achieving up to 27% efficiency improvement over currently available competitive 1200 V solutions Technology ...
The first results of the ETH Zurich and ANSTO collaboration focused on silicon carbide (SiC) devices have been reported in two publications. Dr. Corinna Martinella, formerly a senior scientist at ETH ...
As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
Mitsubishi Electric to Ship Samples of Four New Trench SiC-MOSFET Bare Dies for Power Semiconductors
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that, beginning January 21, it will start shipping samples of four new trench silicon carbide ...
Modern chips are manufactured on slabs of silicon less than a millimeter thick. But semiconductor companies try to slice these silicon wafers thinner and thinner to squeeze more performance out of ...
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